Toshiba Takes NAND Flash Memory to 4-Gigabit Level Using 90 Nanometer Process Technology

Fabricated with 90-nanometer (nm) process technology, the new chip offers double the capacity of Toshiba's present largest single-die NAND flash memory, and will realize higher capacity flash memory cards capable of supporting a wide range of applications. The new 4Gb NAND flash memory enables faster write performance by implementing advanced design concept and adjusting the control system of the memory cell. Samples of the new 4Gb NAND flash memory, TC58NVG2D4BFT00, will be available in April at a unit price of $113.00 and mass production is expected to begin in the third quarter of 2004 at a monthly capacity of 300,000 units.

The new 8Gb device is achieved by stacking the new 4Gb NAND flash memories in a single TSOP (Thin Small Outline Package), opening the way to more powerful applications that enhance the performance of digital consumer electronic devices while supporting their miniaturization. Further, Toshiba plans to introduce a sample of 16Gb NAND flash memory IC that stacks four of the 4Gb NAND flash memories in a single package in the third quarter of 2004.

NAND flash memory offers high density, non-volatile data retention and is widely employed in flash memory cards and as embedded memory in digital consumer products, such as digital still cameras, PDAs, and multifunction cell phones. With the introduction of the new devices, Toshiba's NAND flash memory component line-up will range from 128-megabit to 8Gb (stacked version) devices.

The 4Gb NAND flash memory was developed by Toshiba and SanDisk Corporation, under their 1999 comprehensive agreement on joint development of NAND flash memory. The new chips will be produced with 90nm process technology at the NAND flash facility at Toshiba's Yokkaichi Operations in Japan, which is operated by Flash Vision Japan, the joint venture between Toshiba and SanDisk. Yokkaichi Operations is also the site of the new 300mm wafer fabrication facility that Toshiba will start construction this month in order to meet fast growing demand of NAND flash memory. Mass production of NAND flash memory at the 300mm fab in Yokkaichi is expected to start in the second half of 2005.

Commenting on the new NAND flash memory chips, Shozo Saito, technology executive of Toshiba's semiconductor company, said "Toshiba and SanDisk have responded to the diversifying market demands with a close collaboration dedicated to developing high capacity NAND flash memory. The multi-level cell was developed in response to customer demands for higher storage capacity to enable more competitive price points. With the introduction of the new 4Gb and 8Gb NAND flash memories, Toshiba will further leverage its leadership in the NAND flash market."

"Toshiba understands the cost/performance challenges in the consumer electronics marketplace. Our new 4Gb and 8Gb MLC NAND will continue to provide a cost competitive data storage solution to meet the performance requirements of a wide variety of applications including digital photography, digital video, USB Flash Drives, MP3 players, personal digital assistants (PDAs), and other digital consumer electronics devices," said Scott Nelson, business development director, NAND Flash for Toshiba America Electronic Components, Inc.

Key Points of New ICs

Adoption of 90nm process technology allows the 4Gb NAND memory to use the same package as the company's 1Gb NAND flash memory fabricated with 130nm process technology.

The new 4Gb NAND flash memory enables approximately eight times faster write performance, compared with Toshiba's present memory chip (TC58DVG14B1FT00), by implementing advanced design concept and adjusting the control system of the memory cell. Stacking the new 4Gb NAND flash memories in a single TSOP achieves an 8Gb NAND flash memory in the same package size as the 4-gigabit chip. CompactFlash(R) memory cards, which can incorporate up to four TSOP in a card, will be able to double their capacity to 32Gb (4-gigabyte).

   Major Specifications
   Part Number                TC58NVG2D4BFT00           TH58NVG3D4BFT00
   Memory Size                   4 gigabits                8 gigabits
   Sample Schedule               April 2004                 May 2004
   Sample Price                     $113                      $226
   Mass Production Schedule       3Q 2004                   3Q 2004
   Production Capacity        300,000 (month)           300,000 (month)
   Power Supply                              Vcc=2.7-3.6V
   Page Size                                2048+64 bytes
   Programming Time                600 microsecond per page typical
   Erase Time                      2 milliseconds per block typical
   Access Times                 50 microseconds first access (maximum)
                                50 nanoseconds serial access (minimum)
   Package                          48-pin TSOP Type1, 12x20x1.2mm

  *About TAEC

Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes semiconductors, flash memory-based storage solutions, and displays for the computing, wireless, networking, automotive and digital consumer markets.

TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba, one of the five largest semiconductor manufacturers worldwide in terms of global sales for the year 2003 according to Gartner/Dataquest's Worldwide Semiconductor Market Share Ranking. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.

  (1)  When used herein, gigabit and/or Gb means
       1,024X1,024X1,024=1,073,741,824 bits.  Usable capacity may be less.
       For details, please refer to specifications.

Information in this press release, including product pricing and specifications, content of services and contact information, is current on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://www.chips.toshiba.com/, or from your TAEC representative. All trademarks and tradenames held within are the properties of their respective holders.

CONTACT: Jan Johnson of Multipath Communications, +1-714-633-4008,
jan@multipathcom.com, for Toshiba America Electronic Components, Inc.; Lisa
Nemec of Toshiba America Electronic Components, Inc., +1-949-455-2293,
lisa.nemec@taec.toshiba.com; or Reader Inquiries,
Tech.Questions@taec.toshiba.com

Web site: http://www.chips.toshiba.com/